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:? :?:? @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: 20 16 12 8 4 0 0 v gs = 4.5v 3.0v 2.5v 2.0v 1.5v v gs , drain to source voltage(v) i d , drain current(a) 0.5 2 1.5 3 2.5 on-region characteristics. 1 0.1 0.08 0.04 0.06 0.02 0 02345 v gs , gate to source voltage(v) on-resistance variation with gate-to-source voltage. i d =2.5a t a = 125 c t a = 25 c r ds(on) , on-resistance( ) 0 2 8 12 16 20 3 2.5 2 1.5 1 0.5 v gs , gate to source voltage(v) i d , drain current(a) v ds = 5v t a = -55c 125 c 25 c transfer characteristics. 10 1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 body diode forword voltage variation with source current and temperature. i s , reverse drain current (a) v gs = 0v t a = 125 c 25 c -55 c 0.1 100 v sd , body diode forward voltage(v) 0.8 1.2 1 1.6 1.4 0.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature( c) r ds(on) , normalized drain-source on-resistance on-resistance variation with temperature. v gs = 4.5v i d = 5a 2 1.8 1.6 1.4 1.2 1 0.8 04 8 121620 v gs = 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v i d , drain current(a) on-resistance variation with drain current and gate voltage. r ds(on) , normalized drain-source on-resistance :?:::?:?:?:?:?:?:?:?:a :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:?
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